(China (Mainland))
Product Summary
The SPP20N60C3 is a power transistor.
Parametrics
SPP20N60C3 absolute maximum ratings: (1)continuous drain current: TC=25℃:20.7A, TC=100℃:13.1A; (2)pulsed drain current:62.1A; (3)avalanche energy, single pulse:690mJ; (4)avalanche energy, repetitive tAR limited by Tjmax,ID=20A, VDD=50V:1mJ; (5)avalanche current, repetitive tAR limited by Tjmax:20A; (6)gate sourece voltage static:±20V; (7)gate sourece voltage AC:±30V; (8)power dissipation:208W; (9)operating and storage temperature:-55℃ to +150℃; (10)reverse diode dv/dt:15V/ns.
Features
SPP20N60C3 features: (1)new revolutionary high voltage technology; (2)worldwide best RDS(on) in TO220; (3)ultra low gate charge; (4)periodic avalanche rated; (5)extreme dv/dt rated; (6)high peak current capability; (7)improved transconductance; (8)PG-TO-220-3-31:fully isolated package; (9)Pb-free leading plating: ROHs compliant; (10)qualified according to JEDEC for target applications.
Diagrams
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 SPP20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SPP20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V |
Data Sheet |
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IRC |
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Data Sheet |
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SPP20N60C2 |
Infineon Technologies |
MOSFET N-CH 650V 20A TO-220AB |
Data Sheet |
Negotiable |
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Wirewound Resistors - Through Hole .2 OHM 5% 2W |
Data Sheet |
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