Product Summary

The HMC435MS8GETR is a non-refl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch of the HMC435MS8GETR is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.

Parametrics

HMC435MS8GETR absolute maximum ratings: (1)Control Voltage Range: -0.5 to +7.5 Vdc; (2)Storage Temperature: -65 to +150℃; (3)Operating Temperature: -40 to +85℃; (4)RF Input Power Vctl = 0/+5V: +31 dBm.

Features

HMC435MS8GETR features: (1)High Isolation: 60 dB @ 1 GHz. 50 dB @ 2 GHz; (2)Positive Control: 0/+5V; (3)51 dBm Input IP3; (4)Non-Refl ective Design; (5)MS8G SMT Package, 14.8 mm2.

Diagrams

HMC435MS8GETR diagram

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HMC400MS8

Other


Data Sheet

Negotiable 
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HMC400MS8 / HMC400MS8E

Other


Data Sheet

Negotiable 
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Data Sheet

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HMC402MS8 / HMC402MS8E
HMC402MS8 / HMC402MS8E

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Data Sheet

Negotiable