DS1230Y-120IND+

Product Summary

The DS1230Y-120IND+ 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM, which is organized as 32,768 words by 8 bits. The DS1230Y-120IND+ has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The DS1230Y-120IND+ can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. The DS1230Y-120IND+ in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Parametrics

DS1230Y-120IND+ absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground -0.3V to +6.0V; (2)Operating Temperature 0℃ to 70℃, -40℃ to +85℃ for IND parts; (3)Storage Temperature -40℃ to +70℃, -40℃ to +85℃ for IND parts; (4)Soldering Temperature: DIP Module +260℃ for 10 seconds, Caution: Do Not Reflow (Wave or Hand Solder Only).

Features

DS1230Y-120IND+ features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 70 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8)Full ±10% VCC operating range (DS1230Y); (9)Optional ±5% VCC operating range (DS1230AB); (10)Optional industrial temperature range of -40℃ to +85℃, designated IND; (11)JEDEC standard 28-pin DIP package.

Diagrams