(China (Mainland))
Product Summary
The BLF861A is a Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
Parametrics
Absolute maximum ratings: (1)VDS, drain-source voltage: 65 V max; (2)VGS, gate-source voltage: ±15 V max; (3)ID, drain current (DC): 18 A max; (4)Ptot, total power dissipation at Tmb ≤ 25 ℃: 318 W max; (5)Tstg, storage temperature: -65 to +150 ℃; (6)Tj, junction temperature: 200 ℃ max.
Features
Features: (1)High power gain; (2)Easy power control; (3)Excellent ruggedness; (4)Designed to withstand abrupt load mismatch errors; (5)Source on underside eliminates DC isolators; reducing common mode inductance; (6)Designed for broadband operation (UHF band); (7)Internal input and output matching for high gain and optimum broadband operation.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLF861A |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLF861A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 150W UHF |
Data Sheet |
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