(China (Mainland))
Product Summary
The 2SK3069 is a silicon N channel MOS FET high speed power switching.
Parametrics
2SK3069 absolute maximum ratings: (1)Drain to source voltage VDSS: 60 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 75 A; (4)Drain peak current ID(pulse): 300 A; (5)Body-drain diode reverse drain current IDR: 75 A; (6)Avalanche current IAP: 50 A; (7)Avalanche energy EAR: 214 mJ; (8)Channel dissipation Pch: 100 W; (9)Channel temperature Tch: 150 ℃; (10)Storage temperature Tstg: –55 to +150 ℃.
Features
2SK3069 features: (1)Low on-resistance. RDS(on) = 6 mW typ.; (2)Low drive current; (3)4 V gate drive device can be driven from 5 V source.
Diagrams
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 2SK3069 |
Other |
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Data Sheet |
Negotiable |
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2SK3001 |
Other |
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Data Sheet |
Negotiable |
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2SK3009 |
Other |
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Data Sheet |
Negotiable |
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2SK3012 |
Other |
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Data Sheet |
Negotiable |
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2SK3013 |
Other |
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Data Sheet |
Negotiable |
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2SK3017 |
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MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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